Charge loss compensation during programming of a memory device
US8264882B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2011 |
| Grant date | Sep 11, 2012 |
| Priority date | — |
| Expiry date | Dec 7, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3427
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In programming a selected word line of memory cells, a first program verify or read operation is performed, after one page of a selected word line is programmed, in order to determine a first quantity of memory cells that have been programmed to a predetermined reference point in the programmed first page distribution. Prior to programming the second page of the selected word line, a second program verify or read operation is performed to determine a second quantity of cells that are still at the reference point. The difference between the first and second quantities is an indication of the quantity of cells that experienced quick charge loss. The difference is used to determine an adjustment voltage for the second page verification operation after programming of the second page.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.