Method for manufacturing a magnetoresistive sensor having a novel junction structure for improved track width definition and pinned layer stability
US8266785B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2007 |
| Grant date | Sep 18, 2012 |
| Priority date | — |
| Expiry date | May 29, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49052
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a magnetoresistive sensor having improved pinned layer stability at small track widths. The method includes providing a substrate, and depositing a plurality of sensor layers. A layer of material that is resistant to removal by chemical mechanical polishing (CMP stop layer) and an antireflective coating layer are deposited. A photoresist mask is formed on the antireflective layer, and a reactive ion etch (RIE) is performed to remove portions of the ion mill resistant mask that are not covered by the photoresist mask, the RIE being performed in a plasma chamber having a platen, the performing the RIE further comprising applying a platen power of at least 70 W. An ion milling is performed to remove a portion of the sensor layers, the ion milling being terminating before all of the sensor materials have been removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.