Patent · US Active

Annealing of semi-insulating CdZnTe crystals

US8268663B2 · kind B2 · utility

0Cited by

4References

5Claims

0Family size

Assignee

II-VI Incorporated · US

Inventors

Csaba Szeles · Washington, US
Michael Prokesch · Gibsonia, US
Utpal Kumar Chakrabarti · Allentown, US

Key dates

Filing date	Jun 2, 2009
Grant date	Sep 18, 2012
Priority date	—
Expiry date	Jun 2, 2029

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B29/46
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

In a method of annealing a Cd1-xZnxTe sample/wafer, surface contamination is removed from the sample/wafer and the sample/wafer is then introduced into a chamber. The chamber is evacuated and Hydrogen or Deuterium gas is introduced into the evacuated chamber. The sample/wafer is heated to a suitable annealing temperature in the presence of the Hydrogen or Deuterium gas for a predetermined period of time.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.