Patent · US Active

Diode array and method of making thereof

US8268678B2 · kind B2 · utility

0Cited by

34References

5Claims

0Family size

Assignee

SanDisk 3D LLC · US

Inventors

Steven Maxwell · Santee, US
Michael Konevecki · San Jose, US
Mark Clark · Santa Clara, US
Usha Raghuram · Saratoga, US

Key dates

Filing date	Nov 18, 2010
Grant date	Sep 18, 2012
Priority date	—
Expiry date	Dec 3, 2030

Classification

Technology area (CPC G)Physics
CPC primaryG11C2013/0073
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A method of making a non-volatile memory device includes providing a substrate having a substrate surface, and forming a non-volatile memory array over the substrate surface. The non-volatile memory array includes an array of semiconductor diodes, and each semiconductor diode of the array of semiconductor diodes is disposed substantially parallel to the substrate surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.