Manufacturing method of bump structure with annular support
US8268717B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 15, 2011 |
| Grant date | Sep 18, 2012 |
| Priority date | — |
| Expiry date | Aug 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/0597
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a bump structure with an annular support includes the following steps. A substrate including pads and a passivation layer is provided. The passivation has first openings exposing a portion of the pads. An UBM material layer is formed to cover the passivation layer and the pads. A patterned photoresist layer, having second openings respectively exposing the UBM material layer over the pads, is formed on the UBM material layer. A diameter of each second opening located on a lower surface of the patterned photoresist layer is less than that located on an upper surface of the patterned photoresist layer. Bumps are formed in the second openings. A portion of the patterned photoresist layer is removed to form an annular support at a periphery of each bump. The UBM material layer is patterned using the annular supports and the bumps as masks to form UBM layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.