Structure and method for thin film device
US8269221B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2008 |
| Grant date | Sep 18, 2012 |
| Priority date | — |
| Expiry date | Sep 27, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/942
Abstract
Provided is a thin film device and an associated method of making a thin film device. For example, a thin film transistor with nano-gaps in the gate electrode. The method involves providing a substrate. Upon the substrate are then provided a plurality of parallel spaced electrically conductive strips. A plurality of thin film device layers are then deposited upon the conductive strips. A 3D structure is provided upon the plurality of thin film device layers, the structure having a plurality of different heights. The 3D structure and the plurality of thin film device layers are then etched to define a thin film device, such as for example a thin film transistor that is disposed above at least a portion of the conductive strips.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.