Photonic crystal light emitting device using photon-recycling
US8269238B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2008 |
| Grant date | Sep 18, 2012 |
| Priority date | — |
| Expiry date | May 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/872
Abstract
A photonic crystal light emitting device including: a light emitting diode (LED) light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers; and a first photon-recycling light emitting layer formed on one surface of the first conductive semiconductor layer, opposite to the active layer, wherein the first photon-recycling light emitting layer absorbs a primary light emitted from the LED light emitting structure and emits a light having a different wavelength from that of the primary light, and a photonic crystal structure is formed on an entire thickness of the first photon-recycling light emitting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.