Trench capacitor for high voltage processes and method of manufacturing the same
US8269265B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 14, 2008 |
| Grant date | Sep 18, 2012 |
| Priority date | — |
| Expiry date | Apr 19, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
The present invention provides embodiments of a capacitor and a method of forming the capacitor. The capacitor includes one or more trenches formed in a semiconductor layer above a substrate. The trench includes dielectric material deposited on the trench walls and a conductive fill material formed within the trench and above the dielectric material. The capacitor also includes one or more first doped regions formed adjacent the trench(es) in the semiconductor layer. The first doped region is doped with a first type of dopant. The capacitor further includes one or more second doped regions formed adjacent the first doped region(s) in the semiconductor layer. The second doped regions are doped with a second type of dopant that is opposite to the first type of dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.