RESURF device including increased breakdown voltage
US8269277B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 11, 2010 |
| Grant date | Sep 18, 2012 |
| Priority date | — |
| Expiry date | Nov 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device can include a source region near a working top surface of a semiconductor region. The device can also include a gate located above the working top surface and located laterally between the source and a drain region. The source region and the gate can at least partially laterally overlap a body region near the working top surface. The source region can include a first portion having the first conductivity type, a second portion having a second conductivity type, and a third portion having the second conductivity type. The second portion can be located laterally between the first and third portions and can penetrate into the semiconductor region to a greater depth than the third portion but no more than the first portion. The lateral location of the third portion can be determined at least in part using the lateral location of the gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.