Collective and synergistic MRAM shields
US8269319B2 · kind B2 · utility
4Cited by
15References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2007 |
| Grant date | Sep 18, 2012 |
| Priority date | — |
| Expiry date | Oct 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various structures chip packages are disclosed including a magnetoresistive random access memory (“MRAM”) device and a magnetic shield structure. The magnetic shield structure may be made from material having either ferromagnetic or diamagnetic material and may be shaped and incorporated into the chip package to divert stray magnetic fields away from the MRAM device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.