Silicon polishing compositions with high rate and low defectivity
US8273142B2 · kind B2 · utility
2Cited by
0References
59Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2010 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | Apr 22, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09G1/02
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The invention relates to a chemical-mechanical polishing composition comprising silica, one or more organic carboxylic acids or salts thereof, one or more polysaccharides, one or more bases, optionally one or more surfactants and/or polymers, optionally one or more reducing agents, optionally one or more biocides, and water, wherein the polishing composition has an alkaline pH. The polishing composition exhibits a high removal rate and low particle defects and low haze. The invention further relates to a method of chemically-mechanically polishing a substrate using the polishing composition described herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.