Super lattice/quantum well nanowires
US8273591B2 · kind B2 · utility
3Cited by
11References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2008 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | Mar 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.