Method of constructing a semiconductor device and structure
US8273610B2 · kind B2 · utility
75Cited by
290References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2011 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | Oct 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device, the method including, providing a first monocrystalline layer including semiconductor regions, overlaying the first monocrystalline layer with an isolation layer, transferring a second monocrystalline layer comprising semiconductor regions to overlay the isolation layer, wherein the first monocrystalline layer and the second monocrystalline layer are formed from substantially different crystal materials; and subsequently etching the second monocrystalline layer as part of forming at least one transistor in the second monocrystalline layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.