MOS-FET having a channel connection, and method for the production of a MOS-FET having a channel connection
US8273621B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 8, 2008 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | Dec 27, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/511
Abstract
A MOSFET comprising a substrate of a semiconductor material; source/drain regions, which are arranged at a distance from each other at a surface of the substrate; a gate electrode arranged above an area of the surface of the substrate between the source/drain regions, the gate electrode being electrically insulated from the semiconductor material; at least one recess in the gate electrode, a through-contact arranged in the recess of the gate electrode, the through-contact being electrically insulated from the gate electrode; a terminal contact on the semiconductor material; and a terminal conductor arranged on the side of the gate electrode that faces away from the substrate, wherein the through-contact electrically connects the terminal contact to the terminal conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.