Composite focused ion beam device, process observation method using the same, and processing method
US8274063B2 · kind B2 · utility
3Cited by
8References
20Claims
0Family size
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Key dates
| Filing date | Aug 6, 2008 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | Feb 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31745
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A composite focused ion beam device has a first ion beam irradiation system that irradiates a first ion beam for processing a sample and a second ion beam irradiation system that irradiates a second ion beam for processing or observing the sample. The first ion beam irradiation system has a plasma type gas ion source that generates first ions for forming the first ion beam, each of the first ions having a first mass. The second ion beam irradiation system has a gas field ion source that generates second ions for forming the second ion beam. Each of the second ions has a second mass smaller than that of the first mass.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.