Surface-emitting laser element, fabrication method thereof, surface-emitting laser array, and fabrication method thereof
US8274088B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2007 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | Jan 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/173
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A fabrication method of a surface-emitting laser element includes a step of preparing a conductive GaN multiple-region substrate including a high dislocation density high conductance region, a low dislocation density high conductance region and a low dislocation density low conductance region, as a conductive GaN substrate; a semiconductor layer stack formation step of forming a group III-V compound semiconductor layer stack including an emission layer on the substrate; and an electrode formation step of forming a semiconductor layer side electrode and a substrate side electrode. The semiconductor layer and electrodes are formed such that an emission region into which carriers flow in the emission layer is located above and within the span of the low dislocation density high conductance region. Thus, a surface-emitting laser element having uniform light emission at the emission region can be obtained with favorable yield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.