GaN compound semiconductor light emitting element and method of manufacturing the same
US8274094B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Feb 17, 2012 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | Feb 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a metallic protective film layer with a thickness of at least 10 microns may be formed on the lateral and/or bottom sides of the vertical GaN LED. Further, a metallic substrate may be used instead of a sapphire substrate. A metallic support layer may be formed to protect the element from being distorted or damaged. Furthermore, a P-type electrode may be partially formed on a P—GaN layer in a mesh form.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.