Field effect transistor, logic circuit including the same and methods of manufacturing the same
US8274098B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2007 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | Dec 2, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/907
Abstract
Provided are a field effect transistor, a logic circuit including the same and methods of manufacturing the same. The field effect transistor may include an ambipolar layer that includes a source region, a drain region, and a channel region between the source region and the drain region, wherein the source region, the drain region, and the channel region may be formed in a monolithic structure, a gate electrode on the channel region, and an insulating layer separating the gate electrode from the ambipolar layer, wherein the source region and the drain region have a width greater than that of the channel region in a second direction that crosses a first direction in which the source region and the drain region are connected to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.