Hybrid material accumulation mode GAA CMOSFET

US8274119B2 · kind B2 · utility

Assignee

• SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Deyuan Xiao · Shanghai, CN
• Xi Wang · Shanghai, CN
• Miao Zhang · Beijing, CN
• Jing Chen · Shanghai, CN
• Zhongying Xue · Shanghai, CN

Key dates

• Filing date: Feb 11, 2010
• Grant date: Sep 25, 2012
• Expiry date: Jun 24, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A Ge and Si hybrid material accumulation mode GAA (Gate-All-Around) CMOSFET includes a PMOS region having a first channel, an NMOS region having a second channel and a gate region. The first channel and the second channel have a racetrack-shaped cross section and are formed of p-type Ge and n-type Si, respectively; the surfaces of the first channel and the second channel are substantially surrounded by the gate region; a buried oxide layer is disposed between the PMOS region and the NMOS region and between the PMOS or NMOS region and the Si substrate to isolate them from one another. In an accumulation mode, current flows through the overall racetrack-shaped channel. The disclosed device has high carrier mobility, high device drive current, and maintains the electrical integrity of the device. Meanwhile, polysilicon gate depletion and short channel effects are prevented.