Fully differential, high Q, on-chip, impedance matching section
US8274353B2 · kind B2 · utility
1Cited by
24References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2011 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | Mar 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An inductor circuit is disclosed. The inductor circuit includes a first in-silicon inductor and a second in-silicon inductor each having multiple turns. A portion of the multiple turns of the second in-silicon inductor is formed between turns of the first in-silicon inductor. The first and second in-silicon inductors are configured such that a differential current flowing through the first in-silicon inductor and the second in-silicon inductor flows in a same direction in corresponding turns of inductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.