Magnetoresistive element, magnetic memory cell and magnetic random access memory using the same
US8274818B2 · kind B2 · utility
5Cited by
1References
24Claims
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Key dates
| Filing date | Aug 5, 2008 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | May 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a high-speed and ultra-low-power-consumption nonvolatile memory having a high temperature stability at a zero magnetic field. In a tunnel magnetoresistive film constituting a nonvolatile magnetic memory that employs a writing method using a spin-transfer torque, an insulating layer and a nonmagnetic conductive layer are stacked above a ferromagnetic free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.