Structures and methods for reading out non-volatile memory using referencing cells
US8274828B2 · kind B2 · utility
2Cited by
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37Claims
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Key dates
| Filing date | Dec 15, 2010 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | May 12, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The structures and methods of reading out semiconductor Non-Volatile Memory (NVM) using referencing cells are disclosed. The new invented scheme can reduce large current consumption from the direct current biasing in the conventional scheme and achieve a high resolution on the cell threshold voltage with a good sensing speed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.