Reference voltage generation circuit and semiconductor memory
US8274846B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2010 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | Dec 12, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A reference voltage generation circuit includes a first node settable at a reference voltage to be any one of a plurality of voltage levels, a second node set at a pre-charge voltage, first and second switches connected in series between the first and second nodes, a plurality of capacitors, each capacitor comprising a first end connected to a connection node between the first and second switches and a second end settable at an independent voltage level, a switch controller configured to turn off the first switch and turn on the second switch in an initial state, and then to turn off the second switch, and then to turn on the first switch, and a voltage controller configured to individually set a voltage at the second end of each capacitor after the first switch is turned on.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.