Photomask designing method, photomask manufacturing method, and photomask designing program
US8276103B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 16, 2010 |
| Grant date | Sep 25, 2012 |
| Priority date | — |
| Expiry date | Dec 24, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In one embodiment, a photomask designing method is disclosed. The method includes dividing design pattern data into predetermined regions and obtaining a pattern perimeter for each of the divided regions. The method includes obtaining the pattern perimeter for an entire region of the design pattern data by repeating the obtaining the pattern perimeter for the each of the divided regions. The method includes obtaining a dimension conversion difference for the entire region of the design pattern data using the pattern perimeter for the entire region of the design pattern data and a correlation obtained in advance between a predicted pattern perimeter and a predicted dimension conversion difference. The method includes performing process proximity correction on the design pattern data using a value of the obtained dimension conversion difference, and creating exposure pattern data from the corrected design pattern data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.