Method of processing a substrate
US8277906B2 · kind B2 · utility
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1References
14Claims
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Assignee
Inventors
Key dates
| Filing date | May 21, 2009 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Apr 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing a substrate using plasma includes loading a substrate into a chamber, processing the substrate with a first plasma mode and then processing the substrate with a second plasma mode, wherein at least one of the first plasma mode and the second plasma mode is a time-modulation mode in which a plasma induced in the chamber is periodically turned on and off to reduce plasma-induced damage in the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.