Method and apparatus for growing high purity 2H-silicon carbide

US8278666B1 · kind B1 · utility

Assignee

• NORTHROP GRUMMAN SYSTEMS CORPORATION · US

Inventors

• Narsingh B. Singh · Ellicott City, US
• Sean R. McLaughlin · Severn, US
• Thomas J. Knight · Cumberland, US
• Robert M. Young · Ellicott City, US
• Brian Wagner · Baltimore, US
• David Kahler · Arbutus, US
• Andre Berghmans · Elkton, US
• David J. Knuteson · Columbia, US
• Ty R. McNutt · Columbia, US
• Jerry W. Hedrick · Arnold, US
• George M. Bates · Burke, US
• Kenneth J. Petrosky · Severna Park, US

Key dates

• Filing date: Jun 23, 2010
• Grant date: Oct 2, 2012
• Expiry date: Dec 8, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0262
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The disclosure relates to a high purity 2H-SiC composition and methods for making same. The embodiments represented herein apply to both thin film and bulk growth of 2H-SiC. According to one embodiment, the disclosure relates to doping an underlying substrate or support layer with one or more surfactants to nucleate and grow high purity 2H-SiC. In another embodiment, the disclosure relates to a method for preparing 2H-SiC compositions by nucleating 2H-SiC on another SiC polytype using one or more surfactants. The surfactants can include AlN, Te, Sb and similar compositions. These nucleate SiC into disc form which changes to hexagonal 2H-SiC material.