Lateral insulated gate bipolar transistor
US8278683B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2009 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Mar 1, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/148
Abstract
Current density in an insulated gate bipolar transistor (L-IGBT) may be increased by adding a second gate, and the corresponding MOS transistors, to the source area, which increases the base current compared to a L-IGBT with a single MOS gate. The current density may be further increased by extending the base of the bipolar transistor in the L-IGBT vertically to the bottom surface of the silicon on insulator (SOI) film in which the L-IGBT is fabricated. Adding a buffer diffused region around the sinks in the source improves the base current spatial uniformity, which improves the safe operating area (SOA) of the L-IGBT. A L-IGBT of either polarity may be formed with the inventive configurations. A method of forming the inventive L-IGBT is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.