Method of fabricating polysilicon, thin film transistor, method of fabricating the thin film transistor, and organic light emitting diode display device including the thin film transistor
US8278716B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2009 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Jun 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device including the thin film transistor, the thin film transistor including: a substrate; a buffer layer formed on the substrate; a first semiconductor layer disposed on the buffer layer; a second semiconductor layer disposed on the first semiconductor layer, which is larger than the first semiconductor layer; a gate electrode insulated from the first semiconductor layer and the second semiconductor layer; a gate insulating layer to insulate the gate electrode from the first semiconductor layer and the second semiconductor layer; source and drain electrodes insulated from the gate electrode and connected to the second semiconductor layer; an insulating layer disposed on the source and drain electrodes, and an organic light emitting diode connected to one of the source and drain electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.