Patent · US Active

Sidewall photodetector

US8278741B2 · kind B2 · utility

1Cited by

4References

19Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Michael T. Morse · San Jose, US
Mario Paniccia · Santa Clara, US
Olufemi I. Dosunmu · Santa Clara, US

Key dates

Filing date	Jun 30, 2009
Grant date	Oct 2, 2012
Priority date	—
Expiry date	Sep 28, 2030

Classification

Technology area (CPC G)Physics
CPC primaryG02B2006/12123
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Sidewall photodetectors for integrated photonic devices and their method of manufacture. An embodiment includes a p-i-n film stack formed on a sidewall of a substrate semiconductor feature having sufficiently large area to accommodate the spot size of a multi-mode fiber. An embodiment includes a first sidewall photodetector coupled to a second sidewall photodetector by a waveguide, the first sidewall photodetector having an i-layer tuned to absorb a first wavelength of light incident to the first sidewall and pass a second wavelength of light to the second sidewall photodetector having an i-layer tuned to absorb the second wavelength.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.