Heat dissipation structure for electronic device and fabrication method thereof
US8278755B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2010 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Feb 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/73265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heat dissipation structure for an electronic device includes a body having a first surface and a second surface opposite to the first surface. A silicon-containing insulating layer is disposed on the first surface of the body. An ultrananocrystalline diamond film is disposed on the silicon-containing insulating layer. A first conductive pattern layer is disposed on the silicon-containing insulating layer and enclosed by the ultrananocrystalline diamond film, wherein the ultrananocrystalline diamond film and the first conductive pattern layer do not overlap with each other as viewed from a top-view perspective. A method for fabricating a heat dissipation structure for an electronic device and an electronic package having the heat dissipation structure are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.