System and method for calibrating a lithography model
US8279409B1 · kind B1 · utility
27Cited by
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15Claims
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Key dates
| Filing date | Aug 5, 2009 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Feb 7, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a method for calibrating a computational model of a lithography process by calculating a demerit function using an intensity measurement at a location of a wafer; and calibrating the lithography model or a mask making model by determining values of parameters of the computational model using the calculated demerit function. The method may also use a second demerit function that is defined by the sum of squares of differences between a simulated and measured critical dimensions of a feature on the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.