Magnetoresistance effect element and magnetic random access memory
US8279663B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2011 |
| Grant date | Oct 2, 2012 |
| Priority date | — |
| Expiry date | Jul 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/20
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance effect element includes: a first ferromagnetic layer having invariable magnetization perpendicular to a film plane; a second ferromagnetic layer having variable magnetization perpendicular to the film plane; a first nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer provided on an opposite side of the second ferromagnetic layer from the first nonmagnetic layer, and having variable magnetization parallel to the film plane; and a second nonmagnetic layer interposed between the second and third ferromagnetic layers. Spin-polarized electrons are injected into the second ferromagnetic layer by flowing a current in the direction perpendicular to the film planes between the first and third ferromagnetic layers, precession movement is induced in the magnetization of the third ferromagnetic layer by injecting the spin-polarized electrons, and a microwave magnetic field of a frequency corresponding to the precession movement is applied to the second ferromagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.