Photoresist double patterning
US8282847B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2008 |
| Grant date | Oct 9, 2012 |
| Priority date | — |
| Expiry date | Jan 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for etching an etch layer formed on a substrate is provided. A first photoresist (PR) mask with first mask features is provided on the etch layer. A protective coating is provided on the first PR mask by a process including at least one cycle. Each cycle includes (a) a deposition phase for depositing a deposition layer over the surface of the first mask features using a deposition gas, and (b) a profile shaping phase for shaping the profile of the deposition layer using a profile shaping gas. A liquid PR material is applied over the first PR mask having the protective coating. The PR material is patterned into a second mask features, where the first and second mask features form a second PR mask. The etch layer is etched though the second PR mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.