Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films
US8283201B2 · kind B2 · utility
8Cited by
1References
18Claims
0Family size
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Key dates
| Filing date | Jun 5, 2009 |
| Grant date | Oct 9, 2012 |
| Priority date | — |
| Expiry date | Jun 4, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45531
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.