Method for manufacturing semiconductor device

US8283226B2 · kind B2 · utility

Assignee

• FUJITSU SEMICONDUCTOR LIMITED · JP

Inventors

• Masahiro Fukuda · Tokyo, JP
• Yosuke Shimamune · Kawasaki, JP
• Yuka Kase · Yokohama, JP

Key dates

• Filing date: Jan 20, 2010
• Grant date: Oct 9, 2012
• Expiry date: Apr 30, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0184

Abstract

A method of manufacturing a semiconductor device includes forming a first cap film over gate electrodes formed in a first active region and a second active region, etching the first cap film over the first active region, forming a second cap film over the gate electrodes formed in the first active region and the second active region, etching the second cap film over the first active region, etching the first active region using the gate electrodes to form concave portions in the first active region, and embedding a semiconductor material in the concave portions.