Methods of forming capacitors

US8283236B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Duane M. Goodner · Boise, US
• Sanjeev Sapra · Boise, US
• Darwin Franseda Fan · Boise, US

Key dates

• Filing date: Jan 20, 2011
• Grant date: Oct 9, 2012
• Expiry date: Jan 20, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/716

Abstract

Some embodiments include capacitors. The capacitors may include container-shaped storage node structures that have, along a cross-section, a pair of upwardly-extending sidewalls. Individual sidewalls may have a narrower segment over a wider segment. Capacitor dielectric material and capacitor electrode material may be along the narrower and wider segments of the sidewalls. Some embodiments include methods of forming capacitors in which an initial container-shaped storage node structure is formed to have a pair of upwardly-extending sidewalls along a cross-section, with the sidewalls being of thickness that is substantially constant or increasing from a base to a top of the initial structure. The initial structure is then converted into a modified storage node structure by reducing thicknesses of upper segments of the sidewalls while leaving thicknesses of lower segments of the sidewalls substantially unchanged. Capacitor dielectric material and capacitor electrode material are formed along the modified storage node structure.