Pattern forming method, semiconductor device manufacturing method and semiconductor device manufacturing apparatus
US8283253B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2009 |
| Grant date | Oct 9, 2012 |
| Priority date | — |
| Expiry date | Dec 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A pattern forming method for forming a pattern serving as a mask, includes a process for forming a first pattern 105, a process for trimming a width of the first pattern 105, a process for forming a boundary layer 106 on a surface of the first pattern 105, a process for forming a second mask material layer 107 on a surface of the boundary layer 106, a process for removing a part of the second mask material layer 107 to expose top portions of the boundary layer 106, and a process for exposing the first pattern 105 and forming a second pattern having the second mask material layer 107 at a top portion thereof by etching the boundary layer 106.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.