Process for restoring dielectric properties

US8283260B2 · kind B2 · utility

Assignee

• AIR PRODUCTS AND CHEMICALS, INC. · US

Inventors

• Scott J. Weigel · Allentown, US
• Mark Leonard O'Neill · San Marcos, US
• Mary Kathryn Haas · Emmaus, US
• Laura M. Matz · Allentown, US
• Glenn Michael Mitchell · Sellersville, US
• Aiping Wu · Macungie, US
• Raymond Nicholas Vrtis · Allentown, US
• John Giles Langan · Wescosville, US

Key dates

• Filing date: Aug 13, 2009
• Grant date: Oct 9, 2012
• Expiry date: Aug 25, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3105
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the layer has a third dielectric constant that is restored to a value that is at least 90% restored relative to the second dielectric constant.