Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design
US8283557B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2009 |
| Grant date | Oct 9, 2012 |
| Priority date | — |
| Expiry date | Dec 12, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
One embodiment of the present invention provides a heterojunction solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a passivation layer situated above the heavily doped crystalline-Si layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a layer of transparent-conducting-oxide (TCO) situated above the heavily doped a-Si layer, and a front ohmic-contact electrode situated above the TCO layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.