Jianming Fu
97Patents
31h-index
62Co-inventors
91Inventor score
Filing activity: Jun 7, 1995 → Jul 9, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6277249A | Integrated process for copper via filling using a magnetron and target producing highly energetic ions | Electricity | 195 | Expired |
| US6251242A | Magnetron and target producing an extended plasma region in a sputter reactor | Electricity | 182 | Expired |
| US6274008A | Integrated process for copper via filling | Electricity | 155 | Expired |
| US6784096B2 | Methods and apparatus for forming barrier layers in high aspect ratio vias | Electricity | 114 | Expired |
| US5897752A | Wafer bias ring in a sustained self-sputtering reactor | Electricity | 99 | Expired |
| US6413382B1 | Pulsed sputtering with a small rotating magnetron | Electricity | 98 | Expired |
| US5985759A | Oxygen enhancement of ion metal plasma (IMP) sputter deposited barrier layers | Electricity | 91 | Expired |
| US6306265A | High-density plasma for ionized metal deposition capable of exciting a plasma wave | Electricity | 82 | Expired |
| US6398929B1 | Plasma reactor and shields generating self-ionized plasma for sputtering | Electricity | 69 | Expired |
| US6183614A | Rotating sputter magnetron assembly | Electricity | 65 | Expired |
| US6221221A | Apparatus for providing RF return current path control in a semiconductor wafer processing system | Electricity | 62 | Expired |
| US6451177B1 | Vault shaped target and magnetron operable in two sputtering modes | Electricity | 61 | Expired |
| US6271592A | Sputter deposited barrier layers | Electricity | 59 | Expired |
| US6228236A | Sputter magnetron having two rotation diameters | Electricity | 59 | Expired |
| US6444104B2 | Sputtering target having an annular vault | Electricity | 51 | Expired |
| US6436251B2 | Vault-shaped target and magnetron having both distributed and localized magnets | Electricity | 51 | Expired |
| US5736021A | Electrically floating shield in a plasma reactor | Electricity | 50 | Expired |
| US6358376B1 | Biased shield in a magnetron sputter reactor | Electricity | 48 | Expired |
| US6582569B1 | Process for sputtering copper in a self ionized plasma | Electricity | 41 | Expired |
| US6413383B1 | Method for igniting a plasma in a sputter reactor | Electricity | 40 | Expired |
| US6627050B2 | Method and apparatus for depositing a tantalum-containing layer on a substrate | Electricity | 38 | Expired |
| US6692617B1 | Sustained self-sputtering reactor having an increased density plasma | Electricity | 38 | Expired |
| US6974771B2 | Methods and apparatus for forming barrier layers in high aspect ratio vias | Electricity | 36 | Expired |
| US7253109B2 | Method of depositing a tantalum nitride/tantalum diffusion barrier layer system | Electricity | 35 | Expired |
| US6893541B2 | Multi-step process for depositing copper seed layer in a via | Electricity | 35 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.