Silicon-based dielectric stack passivation of Si-epitaxial thin-film solar cells
US8283559B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2009 |
| Grant date | Oct 9, 2012 |
| Priority date | — |
| Expiry date | Sep 14, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
One embodiment of the present invention provides a solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a first layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the first heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a second layer of heavily doped crystalline-Si situated above the lightly doped crystalline-Si layer, a first layer of dielectric situated above the second heavily doped crystalline-Si layer, a second layer of dielectric situated above the first dielectric layer, and front electrodes situated above the second dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.