Light emitting device and method of manufacturing the same
US8283687B2 · kind B2 · utility
5Cited by
1References
37Claims
0Family size
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Key dates
| Filing date | Oct 23, 2008 |
| Grant date | Oct 9, 2012 |
| Priority date | — |
| Expiry date | Oct 7, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8581
Abstract
Provided are a vertical-type light emitting device and a method of manufacturing the same. The light emitting device includes a p-type semiconductor layer, an active layer, and an n-type semiconductor layer that are stacked, a cover layer disposed on a p-type electrode layer to surround the p-type electrode layer, a conductive support layer disposed on the cover layer, and an n-type electrode layer disposed on the n-type semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.