Semiconductor storage device
US8283717B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2010 |
| Grant date | Oct 9, 2012 |
| Priority date | — |
| Expiry date | Apr 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/30
Abstract
Device isolation/insulation films each have a first height within a first area and a second height higher than the first height within a second area. At least the device isolation/insulation films adjacent to a contact diffusion region exist in the second area, and the device isolation/insulation films adjacent to memory transistors exist in the first area. The device isolation/insulation films are implanted with an impurity of a first conductivity type, and device formation regions each have a diffusion region of the first conductivity type, the diffusion region being formed by diffusion of the impurity of the first conductivity type from the device isolation/insulation films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.