Inventor · Yokohama, JP

Junya Matsunami

42Patents
10h-index
19Co-inventors
68Inventor score

Filing activity: Dec 15, 2009 → Sep 12, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US8178919B2 Nonvolatile semiconductor memory device and method for manufacturing same Electricity 191 Active
US8374033B2 Nonvolatile semiconductor memory device Electricity 190 Active
US8169826B2 Nonvolatile semiconductor memory device Electricity 53 Active
US8436414B2 Non-volatile semiconductor stacked memory device having two semiconductor pillars in a through hole and method for manufacturing same Electricity 51 Active
US8188530B2 Nonvolatile semiconductor memory device and method for manufacturing same Electricity 28 Active
US8653582B2 Nonvolatile semiconductor memory device and method for manufacturing same Electricity 19 Active
US8264031B2 Nonvolatile semiconductor memory device and method for manufacturing same Electricity 16 Active
US8189371B2 Nonvolatile semiconductor memory device and method for driving same Electricity 16 Active
US8748971B2 Three dimensional nonvolatile semiconductor memory having pillars provided inside an oblate through hole Electricity 12 Active
US8654586B2 Nonvolatile semiconductor memory device Electricity 11 Active
US9076723B1 Non-volatile memory device and method for manufacturing same Physics 10 Active
US9312134B2 Nonvolatile semiconductor memory device and method for manufacturing same Electricity 10 Active
US8440528B2 Method for manufacturing a vertical nonvolatile semiconductor memory device including forming floating gates within the recesses created on the interlayer insulating films Electricity 9 Active
US9601503B2 Nonvolatile semiconductor memory device and method for manufacturing same Electricity 6 Active
US8218358B2 Nonvolatile semiconductor memory device and method for driving same Electricity 6 Active
US9941296B2 Nonvolatile semiconductor memory device and method for manufacturing same Electricity 6 Active
US9117522B2 Nonvolatile semiconductor memory device with a write sequence including a setting and removing operation Physics 6 Active
US8361862B2 Method for manufacturing nonvolatile semiconductor memory device and nonvolatile semiconductor memory device Electricity 4 Active
US10600463B2 Magnetic storage device having a memory cell including a magnetoresistive effect element and a selector which includes titanium (Ti), germanium (Ge) and tellurium (Te) Physics 3 Active
US8283717B2 Semiconductor storage device Electricity 3 Active
US9318503B2 Nonvolatile semiconductor memory device and method for manufacturing same Electricity 3 Active
US8767460B2 Nonvolatile semiconductor memory device Electricity 2 Active
US10418378B2 Nonvolatile semiconductor memory device and method for manufacturing same Electricity 2 Active
US11792992B2 Nonvolatile semiconductor memory device and method for manufacturing same Electricity 2 Active
US9029934B2 Nonvolatile semiconductor memory device including floating gate electrodes formed between control gate electrodes and vertically formed along a semiconductor pillar Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.