Semiconductor device
US8283732B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2009 |
| Grant date | Oct 9, 2012 |
| Priority date | — |
| Expiry date | Oct 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0174
Abstract
Provided is a semiconductor device including a substrate, a gate insulating film which is formed on the substrate, and a gate electrode which is provided on the gate insulating film. The gate electrode includes a first metal silicide including a first metal material, and a second metal silicide including one of a second metal material and the second metal material in a contact portion between the gate insulating film and the gate electrode. The second metal silicide including the second metal material is a metal-rich silicide in which the composition ratio of the second metal material to silicon in the second metal silicide including the second metal is greater than 1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.