Optimized free layer for spin torque magnetic random access memory
US8283741B2 · kind B2 · utility
6Cited by
3References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 8, 2010 |
| Grant date | Oct 9, 2012 |
| Priority date | — |
| Expiry date | Oct 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/329
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic tunnel junction stack that includes a pinned magnetic layer, a tunnel barrier layer formed of magnesium oxide (MgO), and a free magnetic layer formed adjacent to the tunnel barrier layer and of a material having a magnetization perpendicular to an MgO interface of the tunnel barrier layer and with a magnetic moment per unit area within a factor of 2 of approximately 2 nanometers (nm)×300 electromagnetic units per cubic centimeter (emu/cm3).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.