Patent · US Active

Thin-wafer current sensors

US8283742B2 · kind B2 · utility

20Cited by
22References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 31, 2010
Grant dateOct 9, 2012
Priority date
Expiry dateJan 15, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Embodiments relate to IC current sensors fabricated using thin-wafer manufacturing technologies. Such technologies can include processing in which dicing before grinding (DBG) is utilized, which can improve reliability and minimize stress effects. While embodiments utilize face-up mounting, face-down mounting is made possible in other embodiments by via through -contacts. IC current sensor embodiments can present many advantages while minimizing drawbacks often associated with conventional IC current sensors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.