Thin-wafer current sensors
US8283742B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2010 |
| Grant date | Oct 9, 2012 |
| Priority date | — |
| Expiry date | Jan 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Embodiments relate to IC current sensors fabricated using thin-wafer manufacturing technologies. Such technologies can include processing in which dicing before grinding (DBG) is utilized, which can improve reliability and minimize stress effects. While embodiments utilize face-up mounting, face-down mounting is made possible in other embodiments by via through -contacts. IC current sensor embodiments can present many advantages while minimizing drawbacks often associated with conventional IC current sensors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.