Multichip semiconductor device, chip therefor and method of formation thereof
US8283755B2 · kind B2 · utility
10Cited by
63References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 13, 2011 |
| Grant date | Oct 9, 2012 |
| Priority date | — |
| Expiry date | May 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15331
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.