Lead frame interconnect scheme with high power density
US8283760B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2010 |
| Grant date | Oct 9, 2012 |
| Priority date | — |
| Expiry date | Jul 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit package configured to incorporate a lead frame and methods for its making are is described. The package comprising an IC with aluminum bond pads in communication with circuitry of the die with lead frame with silver bond pads. The package having gold bumps bonded between the aluminum bond pad of the die and the silver bond pad of the lead frame. The package including an encapsulant envelope and including various materials and bond pad structures and constructed in a manner formed by thermosonically or thermocompressionally bonding the gold balls to the bond pads. Also, disclosed are methods of making the package.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.