Patent · US Active

Wafer Level package for heat dissipation and method of manufacturing the same

US8283768B2 · kind B2 · utility

4Cited by
0References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 15, 2009
Grant dateOct 9, 2012
Priority date
Expiry dateFeb 6, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/15311
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Disclosed herein are a wafer level package for heat dissipation and a method of manufacturing the same. The wafer level package includes a heat dissipation plate including a cavity and a hole, a die including a pad disposed in the cavity of the heat dissipation plate in a face-up manner, a thermal conductive adhesive disposed between the die and an inner wall of the cavity and disposed in the hole, and a redistribution layer connected at one end to the pad and at the other end extended. The wafer level package protects the die from external environments and enables the die to be easily flush with the heat dissipation plate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.